The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 1979
Filed:
Jul. 03, 1978
Ulrich Schwabe, Munich, DE;
Ronald Rathbone, Taufkirchen, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
Semiconductor components, as for LSI-circuits are produced in such a manner that epitaxial layers as well as buried layers are dispensed with while an increased manufacturing yield and an increased structural packing density is achieved via an oxide insulating technique. The process involves applying and structuring a first insulating layer, such as composed of Si.sub.3 N.sub.4, onto a semiconductor substrate having a first zone of one conductivity type therein, etching insulating grooves into the substrate areas not covered with the first insulating layer and filling such grooves with a second insulating layer, such as composed of SiO.sub.2, which is thicker than the first insulating layer, and then emplacing the various semiconductor structures at select surface areas between spaced-apart areas of the second insulating layer so as to complete the semiconductor structure.