The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 1979
Filed:
Jun. 06, 1977
Susumu Koike, Ibaraki, JP;
Gota Kano, Nagaoka-Kyo, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
A new type of nonvolatile static read/write memory cell constructed with one MOS transistor and one MNOS transistor (4) is disclosed. The MNOS transistor (4) and the MOS transistor (3) together with a load resistor are complementary combined to offer binary states in the .LAMBDA.-shaped I-V curve for memory operation under normal power supply. Upon power failure, the MNOS transistor (4) acts as a backing-up element for nonvolatility. By impressing a control pulse on the drain of the MNOS transistor (4) the MNOS transistor changes from the depletion mode to the enhancement mode, thereby storing the last memory contents before the power failure. The stored nonvolatile memory contents can be easily retrieved. Thus a small size static random access memory is provided. The new cell is characterized by advantageous features such as small cell size, simple peripheral circuit, operation with a unipolar power supply and low standby power consumption.