The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1979
Filed:
Dec. 22, 1977
Applicant:
Inventors:
George A Haas, Alexandria, VA (US);
Arnold Shih, Gaithersburg, MD (US);
Richard E Thomas, Riverdale, MD (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324 62 ; 250307 ; 3241 / ;
Abstract
A method which utilizes low-energy electron reflections to determine the ctron affinity and to simultaneously locate the position of the conduction-band edge with respect to the Fermi level at the surface of a single-crystal semiconductor. A beam of very-low-energy electrons (<10eV) is directed onto the surface of the semiconductor and the reflection pattern (beam energy v. current collected by the semiconductor) is analyzed using a kinematical approximation for the interference phenomena.