Single active element controlled-inversion semiconductor storage cell

Abstract

Semiconductor storage switching circuits and integrated circuit storage array devices that employ them are characterized by the fact that each individual cell of the storage array requires only a single active device, each such active device consisting of a three terminal, controlled-inversion device of metal, non-linear resistor, and semiconductor layers, the active device having controllable switching characteristics through the use of silicon dioxide, polycrystalline silicon, or nitrides of silicon in its non-linear resistive layer. Control circuits associated with the memory arrays make possible the unique selection of any one predetermined cell to write, erase, or read its content. Grounded base and grounded emitter forms of the storage devices are provided, as well as random access memory devices.