The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1979
Filed:
Apr. 18, 1978
Applicant:
Inventors:
Manfred Druminski, Vaterstetten, DE;
Roland Gessner, Geretsried, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 29580 ; 156612 ; 156647 ; 156653 ; 156657 ; 156662 ; 357 55 ; 357 60 ;
Abstract
The invention relates to a method for the production of extremely flat silicon troughs in a silicon substrate for MOS-transistors. The object is generally achieved by a localized etching process resulting in a slightly anisotropic trough characteristic and a subsequent rate controlled filling by a selection epitaxy process of said trough with a silicon material. The process is found to minimize the deleterious non-uniformities inherent in the prior art.