The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 1979
Filed:
Feb. 08, 1977
Raymond Henry, Paris, FR;
Philippe Morel, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
A method of fabricating highly miniaturized semiconductor devices which must be electrically but not thermally insulated from ground, by replacing the conventional disk of beryllium oxide with a portion of the substrate itself so as to decrease the thermal resistance. To this end one starts with a disk of 'PIN'-structure silicon. On one of its faces (P or N as the case may be) one deposits by epitaxy, or forms by successive diffusions, the active layers of the device and the surdoped zones. The 'PIN' diode may be reverse biased if it is desired to create a capacity between active layers and metallic support serving as heat sink. Diodes and transistors in high-frequency microelectronics obtained by the method are also described.