The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 1979

Filed:

Dec. 29, 1977
Applicant:
Inventor:

Nicolaas W Van Vonno, Melbourne, FL (US);

Assignee:

Harris Corporation, Cleveland, OH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2957 / ; 2957 / ; 148-15 ; 148187 ; 357 44 ; 357 46 ; 357 48 ; 357 89 ; 357 90 ; 357 91 ; 357 92 ;
Abstract

An integrated circuit having a substrate of a first conductivity type, a first layer of opposite conductivity type thereon and a second layer of said first conductivity type inversely graded on said first layer and including a heavily doped region adjacent the surface opposite said first layer. A ring of said opposite conductivity type extends through said second layer and partially into said first layer and a diffused region of said opposite conductivity type is in the surface of said second layer. The method of fabrication includes epitaxially forming said first layer on said substrate, expitaxially forming said second layer on said first layer having a decreasing impurity concentration from the P-N junction to the surface, forming said ring, nonselectively diffusing to increase the impurity concentration at the area adjacent the surface of said second layer and selectively diffusing to form said diffused surface region.


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