The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1979
Filed:
Jul. 15, 1976
Applicant:
Inventors:
Assignee:
Futaba Denshi Kogyo Kabushiki Kaisha, Chiba, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 15 ; 357 30 ; 427 84 ; 427 86 ; 29589 ; 29590 ;
Abstract
A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.