The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 1979

Filed:

Jul. 14, 1977
Applicant:
Inventor:

Ping K Tien, Chatham Township; Morris County, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 16 ; 357 18 ; 357-4 ; 357 61 ; 350 9611 ; 350 9614 ;
Abstract

A method of epitaxial crystal growth is disclosed in which the lattice constants of adjacent layers are in the ratios of small integers other than one. This method permits the use of previously incompatible compounds, in particular the combination of magneto optic and electro optic elements on the same substrate.


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