The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1979
Filed:
May. 05, 1977
John L Forneris, Lagrangeville, NY (US);
William W Hicks, Wappingers Falls, NY (US);
John H Keller, Newburgh, NY (US);
Charles M McKenna, Fishkill, NY (US);
James A Seirmarco, Buchanan, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.