The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 02, 1979

Filed:

Jun. 29, 1977
Applicant:
Inventors:

Dietrich Schmidt, Burghausen, DE;

Johann Hofer, Kirchdorf, DE;

Karl E Huber, Ach, AT;

Assignee:

Wacker-Chemie GmbH, Munich, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
423350 ; 423349 ;
Abstract

An improved process for the production of pure, elemental semiconductor material, especially silicon, of the type wherein the semiconductor material is produced by decomposition from the gaseous phase, is provided, which includes the initial step of maintaining a melt of the semiconductor material at a temperature of up to a maximum of 200.degree. C above the melting point of the material. Thereafter, at least a gaseous, decomposable compound of the semiconductor material is introduced into the melt, under a pressure of about 0.01 to 30 bar, to produce a pure, elemental semiconductor material in liquid form.


Find Patent Forward Citations

Schmidt, Dietrich. (1979). Process for the production of pure, silicon elemental semiconductor (U.S. Patent No. 4132763). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4132763

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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