The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 1979
Filed:
Jan. 10, 1977
Walter T Matzen, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A dual injector, floating-gate MOS non-volatile semiconductor memory device (DIFMOS) has been fabricated, wherein the electron injection means comprises a p+n+ junction, the n+ region thereof having a critical dopant concentration, controlled by ion implantation. The junction is avalanched to 'write' a charge on the floating gate, and a hole injector junction (n+/p-) is avalanched to 'erase' the charge. An MOS sensing transistor, whose gate is an extension of the floating gate, 'reads' the presence or absence of charge on the floating gate. In a preferred embodiment, the hole injection means includes an MOS 'bootstrap' capacitor for coupling a voltage bias to the floating gate.