The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 1978

Filed:

Nov. 09, 1977
Applicant:
Inventors:

Adrian R Hartman, Westfield, NJ (US);

James C North, New Providence, NJ (US);

George W Reutlinger, Florham Park, NJ (US);

Peter W Shackle, Bridgewater, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 49 ; 357 13 ; 357 60 ; 357 55 ;
Abstract

Disclosed are dielectrically isolated high voltage planar devices and methods of fabricating such devices. The devices are designed so that the large electric fields at the junction edges are significantly reduced; thereby permitting a closely packed structure. This concept may be achieved by forming narrow grooves at the junctions and filling with a thermally grown oxide. In a preferred embodiment, the surface of the devices lies in the (110) plane so that the walls of the grooves are perpendicular thereto in the (111) plane. Fabrication includes bonding the semiconductor wafer to a substrate with an oxide layer therebetween and forming grooves through the wafer to the oxide layer for isolation from device to device.


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