The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1978
Filed:
Sep. 28, 1977
Applicant:
Inventor:
Paul H Ouyang, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 22 ; 357 23 ; 357 55 ;
Abstract
An improved short-channel complementary MOS transistor structure is provided. The problems of low punch-through voltage breakdown, and 'short-channel effects' are particularly addressed and solved. Accurate and precise field protection of all area surrounding the channel, source and drain regions of both the p-channel MOS transistor device and the n-channel transistor device is simply and effectively accomplished. The threshold voltage of the n-channel MOS transistor device is precisely controlled by a boron implantation. The method of manufacturing such device is disclosed.