The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1978
Filed:
Feb. 15, 1977
Applicant:
Inventors:
Friedrich Dannhauser, Munich, DE;
Alfred Porst, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 13 ; 357 89 ; 357 90 ;
Abstract
The present invention concerns a power diode with a semiconductor body having an inner zone with a given thickness and a given specific resistance, and having on each side of said inner zone at least one outer zone which adjoins the inner zone and has a lower specific resistance in comparison with the inner zone. The diode is characterized in that the specific resistance and the thickness of the inner zone are so adapted to each other that U.sub.B < U.sub..rho.T, wherein U.sub.B is the avalanche voltage, and U.sub..rho.T is the voltage at which the space-charge zone includes the entire relatively lightly doped inner zone.