The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 1978
Filed:
May. 22, 1978
Wirojana Tantraporn, Schenectady, NY (US);
Se P Yu, Schenectady, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
An interdigitated field effect transistor for high power, high frequency applications has a vertical configuration with current flow essentially normal to the surface, as compared to planar devices in which current flow is parallel to the surface. Each channel region is of the same conductivity type as the source and drain regions and is in a mesa structure surrounded by the gate metallization such that the gate metal forms an electronically blocking contact to the channel semiconductor. The device geometry has a natural strip line configuration.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile