The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 1978
Filed:
Jul. 05, 1977
Robert I Frank, Cambridge, MA (US);
Thomas E Salzer, Bedford, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A platinum film resistor device and method for making the same. A layer of quartz, deposited upon an insulative substrate preferably silicon, is sputter etched at high power levels to produce etch pits in the surface thereof. A layer of platinum is then deposited over the quartz layer by first sputtering platinum at high power for a relatively short period of time and then completing the layer by continuing to sputter deposit platinum at a lower power. A second layer of quartz is deposited over the layer of platinum and the second layer of quartz masked and chemically etched away in the regions where portions of the platinum layer are to be removed. The exposed platinum and a portion of the second quartz layer are then sputter etched away leaving the platinum in a predetermined configuration. The platinum is then annealed, the second quartz layer removed above the lead bonding pads, and external leads attached. The device is particularly useful in temperature measuring application.