The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 1978
Filed:
Sep. 26, 1977
Robert Bosch GmbH, Stuttgart, DE;
Abstract
Proceeding in order from the light-side to the beam-side of the target structure, the structure includes a transparent glass plate, a transparent signal electrode, a photoconductive layer of n-type CdSe, and a layer of n-type ZnSe. The interface between the two n-type layers is possessed of a multitude of interface states capable of capturing holes optically liberated in the photoconductor and electrons injected by the scanning beam. Beam-injected electrons cannot pass directly across the interface, and therefore dark current is reduced in a manner as effective as with p-n junction target structures. Each optically generated hole trapped at the interface lowers the potential barrier for beam-injected trapped electrons by an amount such as to cause more than one such electron to enter the conduction band of the CdSe layer, resulting in greater-than-unity amplification. Amplification by factors in excess of 100 can be achieved.