The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 1978
Filed:
Oct. 26, 1976
Nobuo Kotera, Kokubunji, JP;
Nobuo Miyamoto, Hachioji, JP;
Hitachi, Ltd., , JP;
Abstract
A method for producing an InSb thin film element comprising the steps of (i) preparing a substrate at least one surface of which is made of alumina or an inorganic insulating material containing at least 12 mol % of alumina, and forming an InSb thin film of a thickness of at most 0.2 .mu.m on the surface of said substrate, (ii) depositing on said InSb thin film a film which is made of an inorganic insulating material containing at least 12 mol % of alumina, (iii) heating said InSb thin film above the melting point of InSb, and (iv) cooling said InSb thin film and recrystallizing InSb. The InSb thin film element thus produced has the InSb thin film whose thickness is at most 0.2 .mu.m, whose surface is flat and which has good electrical characteristics.