The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1978
Filed:
Feb. 08, 1978
Applicant:
Inventor:
Mamoru Kurata, Tokyo, JP;
Assignee:
Tokyo Shibaura Electric Co., Ltd., Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 36 ; 357 51 ; 357 65 ; 357 71 ; 357 79 ;
Abstract
A gate turn-off type thyristor comprises a semiconductor body having four sequentially contiguous layers, adjacent two of which are of opposite type conductivity and form a PN junction therebetween, one outer layer constituting a cathode layer of said body being divided into a plurality of mutually independent layer portions; and first and second electrodes packing said semiconductor material body. Between the cathode layer and the electrode is disposed a semiconductor wafer formed with high impurity concentration surface layers for permitting the wafer to ohmically contact with said cathode layer and said electrode, respectively.