The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 1978

Filed:

Sep. 06, 1977
Applicant:
Inventors:

Marc Ilegems, Summit, NJ (US);

Louis A Koszi, Scotch Plains, NJ (US);

Bertram Schwartz, Westfield, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 16 ; 357 12 ; 357 40 ; 357 45 ; 357 55 ;
Abstract

A plurality n of double heterostructure photodiodes are coupled together by (n-1) interleaved n.sup.+ -p.sup.+ tunnel junctions to form a multi-layered integrated structure which has an open circuit photovoltage approaching the sum of the open circuit photovoltages of the individual photodiodes. In one embodiment, in which radiation to be detected is made incident normal to the layers, the absorbing layers of the photodiodes get progressively thicker away from the substrate. In a second embodiment, in which the radiation is made incident parallel to the layers, all of the absorbing layers have essentially the same thickness. In a third embodiment, in which radiation is made incident normal to the layers, the structure has a stepped configuration and all of the absorbing layers have essentially the same thickness.


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