The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 1978
Filed:
Jan. 04, 1977
Applicant:
Inventors:
Yoichi Tamaki, Kokubunji, JP;
Seiichi Isomae, Kokubunji, JP;
Masahiko Ogirima, Tokyo, JP;
Akira Shintani, Hachioji, JP;
Michiyoshi Maki, Kokubunji, JP;
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; B32B / ; C04B / ; H01L / ;
U.S. Cl.
CPC ...
357 54 ; 357 52 ; 428446 ; 428336 ; 427 94 ; 427255 ; 427272 ; 106 735 ;
Abstract
A germanium-containing silicon nitride film has a germanium content of 0.5 to 10 atomic-% that of the silicon content. Since the film has a much smaller stress than a conventional silicon nitride (Si.sub.3 N.sub.4) film, it is very suitable as a mask for fabricating a semiconductor device and an insulating or a protective film for a semiconductor device.