The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 1978
Filed:
Jul. 25, 1977
Michael F Tompsett, New Providence, NJ (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
A semiconductor charge coupled device (CCD) with split electrode charge sensors contains a localized connecting impurity doped region, of opposite conductivity type from that of the semiconductor transfer sites, underlying the gap between each pair of split electrodes; and each such connecting region is contiguous with both transfer sites underlying each pair of split electrodes, thereby serving to equilibrate the potentials of both such transfer sites. The entire downstream edge of each of these connecting regions is bounded by a separate localized channel stopping auxiliary barrier region of higher threshold than that of the charge transfer channel, in order to suppress dynamic signal charge transfer inefficiency caused by spurious contributions of charge from the connecting regions to the propagating signal charge packets.