The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 1978
Filed:
Oct. 24, 1975
Applicant:
Inventors:
Jun-ichi Nishizawa, Sendai, JP;
Mitsuhiro Kimura, Sendai, JP;
Assignees:
Semiconductor Research Foundation, Sendai, JP;
Tohoku Metal Industries Limited, Sendai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
428446 ; 106 42 ; 106 7333 ; 106 734 ; 156608 ; 156612 ; 1566 / ; 156D / ; 252 635 ; 423600 ; 428539 ;
Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminium oxide) and at least one additive selected from a group consisting of oxides of gallium, titanium, scandium, and others. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.