The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1978
Filed:
Mar. 28, 1977
Alan W Fulton, Batavia, IL (US);
William J Ooms, Schaumburg, IL (US);
Ray A Reed, Bolingbrook, IL (US);
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Abstract
Several embodiments of isolated lateral transistors are shown. The emitter and collector electrodes of each embodiment are formed in the same processing step as the region which isolates the transistor from other structures. Consequently, the emitter and collector electrodes are each relatively heavily doped and extend to an underlying buried layer over which the transistor is formed. The heavy doping and the deep penetration of the collector and emitter diffusions tend to increase transistor efficiency; and since the emitter and collector electrodes are formed in the same processing step as the isolation diffusion, there is a reduction in processing complexity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile