The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 1978

Filed:

Aug. 05, 1977
Applicant:
Inventors:

Maurice Bonis, Herouville, FR;

Bernard Roger, Carpiquet, FR;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 46 ; 357 44 ; 357 55 ; 357 56 ;
Abstract

A semiconductor device including a substrate of first conductivity type provided with an epitaxial region of the opposite conductivity type. The base of a first vertical bipolar transistor is formed by a localized epitaxial layer present above the first region, the collector of the transistor and the base of a second vertical bipolar transistor adjoining each other in the region.


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