The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 1978
Filed:
Jun. 22, 1977
Applicant:
Inventor:
Noboru Horie, Kodaira, JP;
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 43 ; 357 42 ; 357 44 ; 357 46 ; 357 48 ;
Abstract
A semiconductor IC structure including a plurality of isolated devices in a single substrate of a first conductivity type comprising at least three wells of a second conductivity type formed in the substrate, two of the wells reaching different edges of a buried layer of the second conductivity type at the bottom of the substrate to define a first zone of the first conductivity type in the substrate and the other wells defining at least one second zone of the first conductivity type in the substrate, and a method of fabricating a semiconductor IC structure of the above-mentioned type.