The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 1978
Filed:
Nov. 03, 1976
Dieter Silber, Hausen, DE;
Karl-Julius Finck, Frankfurt, DE;
Marius Fullmann, Neu-Isenburg, DE;
Wolfgang Winter, Eschborn, DE;
Licentia Patent-Verwaltungs-G.m.b.H., Frankfurt am Main, DE;
Abstract
A light fired thyristor including a semiconductor body having four zones of alternatingly opposite conductivity types constituting a first or cathode emitter zone, a control base zone adjacent thereto, a main base zone and a second or anode emitter zone with the cathode emitter zone being formed within the control base zone at one major surface of the semiconductor body and being divided into a plurality of separate regions of which one serves as the firing region of the first emitter zone to fire the thyristor in response to impinging radiation energy. The firing region of the first emitter zone is provided in part with a first ohmic contact which is ohmically connected to a further ohmic contact connected to the control base region adjacent the edge of the semiconductor body. The remaining regions of the first emitter zone are provided with a cathode contact which simultaneously contacts the portions of the control base zone between these regions and forms short circuits with the control base zone. Consequently with interfering currents which are approximately uniformly distributed over the thyristor area, an increase in potential is produced in the firing region of the first emitter zone which increase is in the same direction as the increase in potential in the firing region of the control base zone and the likelihood of a faulty firing of the thyristor is reduced.