The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 1978
Filed:
May. 31, 1977
Jean Luc Berger, Paris, FR;
Michel Bourrat, Paris, FR;
Yves Thenoz, Paris, FR;
Daniel Woehrn, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
A new method of manufacturing a two-phase charge-transfer device operating by the charge-coupled technique, in which the asymmetry means associated with each group of electrodes are constituted by impurity barriers implanted in the semiconductor substrate and are automatically positioned in relation to the electrodes, in particular by carrying out implantation operations through masks constituted by films of silicon nitride and by the electrodes themselves, the films of silicon nitride subsequently being completely removed. This method makes it possible to create linear charge-transfer registers and photo-sensitive matrices.