The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 1978
Filed:
Oct. 12, 1976
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 176 10 ; 357 38 ; 357 91 ;
Abstract
A method is disclosed for the production of n-doped silicon single crystals, each having a dish-shaped specific electrical resistance profile in a radial direction about a central axis of the crystal. A silicon single crystal is exposed to a pattern of radiation with neutrons according to the reaction 30.sub.Si (n,.gamma.) 31.sub.Si .sup..beta.-.fwdarw. 31.sub.P. The neutron radiation causes a weaker doping concentration in marginal regions of the crystals due to the production of fewer phosphorus atoms. Either p-conductive silicon crystals or n-conductive silicon crystals may be utilized as an initial material for exposure to the neutron radiation.