The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 1978
Filed:
Nov. 26, 1976
John W Hile, Birmingham, MI (US);
General Motors Corporation, Detroit, MI (US);
Abstract
A method of making a zener diode having an accurately predetermined breakdown voltage. A discrete device and integrated circuit adaptation of this device is disclosed. A specially highly doped opposite conductivity type island is embedded in a high resistivity body portion. Embedded in the body portion contiguous the island is an ion implanted surface portion of the one conductivity type. The surface portion has an accurately predetermined concentration of conductivity determining impurity atoms in the range of about 1 .times. 10.sup.16 to 1 .times. 10.sup.19 atoms per cubic centimeter. A PN junction having a high breakdown voltage separates the island from the body. A PN junction having a lower but accurately predetermined breakdown voltage separates the island from the surface portion and forms a zener junction. In integrated circuit adaptations, this device preferably shares a transistor electrode for a transistor junction that is to be protected from overvoltage effects.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile