The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 1978

Filed:

Jan. 27, 1977
Applicant:
Inventors:

Horst Witzke, Princeton, NJ (US);

Schoen-nan Chen, North Brunswick, NJ (US);

Satyendra K Deb, East Brunswick, NJ (US);

Michael A Russak, Farmingdale, NY (US);

Assignees:

Optel Corporation, Princeton, NJ (US);

Grumman Aerospace Corporation, Bethpage, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M / ; H01M / ;
U.S. Cl.
CPC ...
429111 ;
Abstract

A photogalvanic cell includes a glass substrate with a transparent electrode which receives irradiating light energy. A second electrode is positioned in spaced relationship from the first electrode and has a thin film of charge storing tungsten oxide deposited thereon. Spaced from both the transparent electrode and the tungsten oxide thin film is a counterelectrode. An electrolyte having TiO.sub.2 powder mixed therein forms a photoactive site at the surface of the transparent electrode. By physically separating the tungsten oxide thin film from the transparent electrode, more light irradiates the TiO.sub.2 thereby increasing the photoconversion of the cell.


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