The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 1978

Filed:

Aug. 08, 1977
Applicant:
Inventors:

Jitendra Goel, Kendall Park, NJ (US);

Subrahmanyam Yegna Narayan, Belle Mead, NJ (US);

Ira Drukier, New York, NY (US);

Assignee:

RCA Corporation, New York, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B23K / ;
U.S. Cl.
CPC ...
2191 / ; 2191 / ;
Abstract

A mask for manufacturing microcircuits is comprised of a substratum and a layer of matter, such as, for example gold, adjacent the substratum. An aperture is located in the layer of matter. The aperture in the layer of matter exhibits a cross-section resembling an inverted isosceles trapezoid. The method for manufacture of the mask comprises the steps of appositioning a patterned layer of photoresist to a layer of gold which is adjacent the substratum. The structure comprising the photoresist, the gold layer and the substratum is exposed to a beam of ions having a preselected kinetic energy such that the ions remove gold exposed by apertures in the photoresist layer. The kinetic energy of the ions is selected such that an aperture is eroded in the layer of gold, the aperture exhibiting an inverted isosceles trapezoidal cross-section.


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