The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1978
Filed:
Jan. 27, 1977
Satyendra K Deb, East Brunswick, NJ (US);
Schoen-nan Chen, North Brunswick, NJ (US);
Horst Witzke, Princeton, NJ (US);
Michael A Russak, Farmingdale, NY (US);
Joseph Reichman, Great Neck, NY (US);
Optel Corporation, Princeton, NJ (US);
Grumman Aerospace Corporation, Bethpage, NY (US);
Abstract
A photogalvanic cell includes a conducting SnO.sub.2 electrode upon which is deposited a semi-transparent film of Ti. A metal oxide thin film, such as TiO.sub.2 is in turn deposited upon the semi-transparent Ti thin film. An aqueous (acid or base) electrolyte contacts the metal oxide thin film to form a photoactive site for converting light to electrical energy. The semi-transparent film reduces the internal resistance of the cell by assisting charge transfer between the metal oxide film and the electrode. Also, use of a semi-transparent film permits bi-directional irradiation of the cell to increase photoconversion efficiency.