The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1978
Filed:
Jun. 02, 1977
Karl Platzoeder, Haimhausen, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A semiconductor component having a semiconductor body having at least two zones of alternate opposite conductivity type in which the concentration of introduced recombination centers is varied between the anode side and the cathode side in such a way that the profile of the recombination centers is not symmetrical. A thyristor is disclosed in which at least the outer anode-side region of the central zone is divided into surface elements having differing levels of concentration of recombination centers, and in which the ratio of the surface elements is set to be such that in the central region the mean value of the concentration of the recombination centers is higher than the cathode-side mean value. Gettering layers are provided which produce this result. Surface elements are provided in the semiconductor body which alter the concentration of recombination centers. The ratio of the areas of the surface elements having a high concentration to those having a low concentration should lie between 0.9:0.1 and 0.1:0.9. The maximum distance between surface elements having a low concentration preferably should be less than the thickness of the semiconductor body.