The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1978
Filed:
Feb. 15, 1977
Applicant:
Inventors:
Yasukazu Inoue, Tokyo, JP;
Masanori Kikuchi, Tokyo, JP;
Assignee:
Nippon Electric Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
307304 ; 3072 / ; 357 13 ; 357 23 ; 357 41 ;
Abstract
An integrated circuit includes an insulated-gate field effect transistor and a protection device coupled to either the source or drain of the transistor. The protection device includes a gate-controlled diode having a breakdown voltage that is less than the breakdown voltage of the drain of the field effect transistor.
Inoue, Yasukazu. (1978). Gate controlled diode protection for drain of igfet (U.S. Patent No. 4115709). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4115709
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile