The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1978
Filed:
Mar. 22, 1976
Applicant:
Inventors:
Teruaki Aoki, Tokyo, JP;
Motoaki Abe, Hiratsuka, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 357 59 ;
Abstract
A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms. The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer. The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.