The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1978
Filed:
Nov. 21, 1977
Applicant:
Inventors:
Lewis Emanuel Katz, Allentown, PA (US);
Carl Lewis Paulnack, Allentown, PA (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C23C / ; H05B / ;
U.S. Cl.
CPC ...
156612 ; 118 48 ; 118 495 ; 118500 ; 148175 ; 156613 ; 219 / ; 219 1067 ; 427 45 ; 4272 / ; 427299 ;
Abstract
A method is described for growing epitaxial layers of material on monocrystalline substrates, chiefly silicon, which are substantially free of slip dislocations. The method involves placing an encircling ring of inert, heat resistant material around the rim of the substrate and over the peripheral surface of the substrate to suppress radiation from the peripheral portion of the wafer. The generation of slip dislocations is inhibited because heat is more uniformly distributed throughout the wafer.