The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1978
Filed:
Jan. 28, 1977
Applicant:
Inventors:
Tomisaburo Okumura, Kyoto, JP;
Hiroshi Okazaki, Takatsuki, JP;
Akira Tsuchitani, Joyo, JP;
Seiji Ueda, Takatsuki, JP;
Assignee:
Matsushita Electronics Corporation, Kadoma, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148187 ; 357 23 ;
Abstract
A method of making a MOS device, for instance, metal-oxide semiconductor type integrated circuit, is disclosed which comprises the following steps: Sequentially forming on a specified part of single crystal silicon substrate,
Okumura, Tomisaburo. (1978). Method of making a mos device (U.S. Patent No. 4113533). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4113533
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile