The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1978
Filed:
Feb. 01, 1977
Applicant:
Inventor:
Michel deBrebisson, Caen, FR;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148175 ; 357 50 ; 357 91 ;
Abstract
A method of manufacturing a semiconductor device is disclosed in which an unwanted inversion layer between two otherwise isolated regions is eliminated. The inversion layer is eliminated by ion implanting a semiconductor layer of higher doping concentration than that of the substrate over the entire substrate surface. A semiconductor device manufactured by the method is also disclosed.
deBrebisson, Michel. (1978). Method of manufacturing a semiconductor device by non-selectively (U.S. Patent No. 4113513). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4113513
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile