The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1978
Filed:
Dec. 20, 1976
Horng-sen Fu, Dallas, TX (US);
Thomas C Holloway, Garland, TX (US);
Al F Tasch, Jr, Richardson, TX (US);
Pallab K Chatterjee, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Disclosed is a process for constructing an array of memory cells. Each cell is constructed to have a high storage capacity and low leakage current. The cells are formed on a surface of a semiconductor substrate. Each cell has a storage region and an adjacent transfer region. The process forms a deep ion layer and a shallow ion layer in the storage region of each cell. At the storage region-transfer region interface, the deep ion layer lies laterally within the shallow ion layer. In the other portions of the storage region, the deep ion layer extends laterally into adjoining channel stops.