The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1978
Filed:
May. 25, 1977
Applicant:
Inventor:
Roger Thomas Baker, Mt. Tabor, NJ (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365187 ; 307238 ; 365222 ;
Abstract
A dynamic memory cell with automatic refreshing is described which requires only three insulated gate field effect transistors (IGFETs). Binary datum is stored in the cell by maintaining the gate of the first IGFET high for a one and low for a zero. The second IFGET is used for cell selection in the read and write operations, and is in series with the first transistor. The third IGFET has one gate electrode, but the channel region of this transistor has two regions, and the surface potential vs. gate voltage characteristics of these two regions differ. Regardless of the datum stored in the cell, pulsing the gate of this third transistor refreshes the memory cell.