Stabilized charge injector for charge coupled devices with means for

Abstract

A stabilized charge injector for charge coupled devices (CCD) includes a diffusion and two or more gate structures in a CCD channel wherein the diffusion alternately acts as a source and drain of the minority-type signal carriers. D.C. signals are applied to the gates immediately adjacent the diffusion and the next successive adjacent gate to provide a charge injection which is proportional to the difference between the signal voltage applied to the one of the two gates and a DC reference voltage applied to the other thereof. Low noise performance is achieved through utilization of a quasi-static operation in which neither of the aforementioned gates adjacent the diffusion is pulsed. Moreover, the use of a gate injector presents at the input, a true capacitance defined as a function of the gate oxide layer. Hence, the value of capacitance is constant and independent of the signal voltage applied. A stabilized charge injector structure is disclosed providing a large value of capacitance for minimizing noise in the injection operation, and wherein problems otherwise arising out of the large size of the capacitance as to adequate speed of propagation of charges from the capacitance to a CCD charge transfer structure are overcome by special gate electrode structures and pulsing techniques to provide successive pushes of the charge being injected from the gate capacitance into the receiving CCD transfer device. The stabilized charge injector may be used for either serial or parallel injection into a CCD channel and its advantages most fully being realized in the parallel input mode; operating waveforms for the charge injector to provide parallel injection into a CCD channel during each shift cycle thereof and, alternatively, to provide selectively timed parallel charge injection in successive intervals are disclosed.