The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1978
Filed:
Dec. 13, 1976
Ronald Rathbone, Taukfirchen, DE;
Ulrich Schwabe, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A high-frequency transistor is provided having a small effective emitter width and a low base bulk resistance. The transistor is isolated from adjacent components by insulating material portions. The base zone comprises first and second doped zones. The first zone establishes the effective emitter width and has a lower concentration than the second zone. The lateral extent of the first zone is established by one of the insulating material portions and the second zone of the base zone. The collector of the transistor is positioned beneath both the first and second zones of the base zone and the emitter of the transistor is positioned above the first zone and an end portion of the second zone.