The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1978
Filed:
Dec. 30, 1976
Applicant:
Inventors:
Hiroshi Shibata, Itami, JP;
Tsutomu Yoshihara, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B01J / ;
U.S. Cl.
CPC ...
29571 ;
Abstract
An insulated gate semiconductor is prepared by forming auxiliary regions for source-drain regions having a shallow junction by a self-aligning process using a gate electrode as a mask; covering it with a thick insulating membrane for surface protection; forming a contact hole for bonding an electrode in the thick insulating membrane; and forming source-drain regions having deep junction through the contact hole and bonding an electrode metal to it in the contact hole.
Shibata, Hiroshi. (1978). Process for preparing insulated gate semiconductor (U.S. Patent No. 4109371). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4109371
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile