The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1978
Filed:
Jun. 29, 1977
Applicant:
Inventors:
Andreas Glasl, Haar, DE;
Helmuth Murrmann, Ottobrunn, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 35 ; 357 40 ; 357 49 ; 357 59 ; 357 65 ;
Abstract
A semiconductor device having one or more electrodes thereon composed of doped polycrystalline silicon. Initially undoped polycrystalline silicon is applied at select electrode positions of a semiconductor device and is then doped by diffusion or implantation. The resultant device is characterized by a high current amplification, a low inner path of resistance and low noise.