The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1978
Filed:
Mar. 19, 1976
Applicant:
Inventors:
Masayoshi Naito, Hitachi, JP;
Tatsuya Kamei, Hitachi, JP;
Assignee:
Hitachi, Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 64 ; 357 38 ; 148190 ;
Abstract
A semiconductor device is doped with a multiple acceptor impurity having a monovalent energy level for forming a recombination center of carriers within the semiconductor body, and at least one multivalent energy level for capturing carriers within a depletion layer of a PN junction of the semiconductor body.
Naito, Masayoshi. (1978). Silicon doped with cadmium to reduce lifetime (U.S. Patent No. 4107731). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4107731
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile