The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1978
Filed:
Jul. 30, 1975
Takashi Yoshida, Hamamatsu, JP;
Takeshi Matsuyama, Hamamatsu, JP;
Nippon Gakki Seizo Kabushiki Kaisha, Hamamatsu, JP;
Abstract
A horizontal junction-type field effect transistor having a saturated drain current to drain voltage characteristic and constituting an input transistor and a vertical junction-type field effect transistor having an unsaturated drain current to drain voltage characteristic and constituting an output transistor are connected in cascode fashion to compose a compound field effect transistor. This compound field effect transistor has a saturated characteristic, a high transconductance gm and a high breakdown voltage resembling those of a pentode vacuum tube. This compound field effect transistor is constructed in the form of monolithic integrated circuitry by the combined use of the dielectric isolation technique utilizing mesa groove and the pn-junction isolation technique.