The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1978
Filed:
Jul. 06, 1976
Applicant:
Inventors:
James Vincent DiLorenzo, Piscataway, NJ (US);
William Charles Niehaus, Murray Hill, NJ (US);
Lawrence John Varnerin, Jr, Watchung, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 2956 / ; 29574 ; 148 335 ; 3311 / ; 357 13 ; 357 15 ; 357 89 ; 357 90 ;
Abstract
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a 'clump' of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.