The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1978
Filed:
Feb. 10, 1977
Applicant:
Inventors:
Michel de Brebisson, Caen, FR;
Maurice Bonis, Herouville, FR;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 357 34 ; 357 91 ;
Abstract
A method of manufacturing transistors by means of ion implantation is characterized by the implantation of a uniform extrinsic base zone, by providinbg a mask having at least two windows, and by the implantation of the emitter zone and then of the intrinsic active base zone via a first window, after which the implanted zones are annealed.
de Brebisson, Michel. (1978). Method of manufacturing transistors by means of ion implantation (U.S. Patent No. 4106954). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4106954
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile